Non-volatile ferroelectric capacitor (nvCap) that leverages the small-signal non-destructive read is a new concept to the ferroelectric memory family. nvCap overcomes the endurance limitation imposed by the destructive read in conventional ferroelectric random access memory (FeRAM) that relies on large-signal polarization switching.  nvCap is also a promising candidate to enable the charge domain computation in a capacitive crossbar array for in-memory computing that only consumes dynamic power.  The key engineering goal of nvCap is to optimize a asymmetric C-V characteristics to open up the large capacitance on/off ratio at DC zero voltage. In this talk, we present the progresses of our work on optimizing the nvCap device. We first introduce the HZO-based MFM nvCap that demonstrates the proof-of-concept, and present the FeFET-based MFS nvCap that improves capacitance on/off ratio with reliability/scaling analysis. Finally we report our new results on BEOL-compatible MFS nvCap based on a oxide semiconductor layer.