Artificial intelligence (AI) is clearly a transformative force reshaping our technological landscape and igniting a surge of interest in disruptive innovations across all levels of abstraction. As we stand on the brink of an AI revolution, the demand for advanced computing capabilities is skyrocketing. Yet, traditional memory solutions like on-chip SRAM and off-chip DRAM are struggling to keep up, creating a critical bottleneck that can impede the AI juggernaut. Imagine the possibilities if we could achieve over 100X improvements in memory density, bandwidth, latency, performance, and energy efficiency! This isn't just a dream—it's an urgent necessity for the future of AI. Enter ferroelectric devices, which hold incredible potential when co-optimized for key parameter indices (KPIs) across system, design, device, technology and materials. This talk will explore the exciting opportunities and formidable challenges that lie ahead as we transition from established memory devices, technologies and materials to novel ones. Join this journey as we envision a future where memory technology not only supports but accelerates the AI revolution!