Ferroelectric tunneling junctions (FTJ) are 2-terminal non-volatile memory devices, that consist of an active ferroelectric layer or multi-layer stack which is sandwiched between two metallic or semiconducting electrodes. In these devices the non-destructive read operation bases on the modulation of the tunneling current by the polarization state of the ferroelectric layer. Due to their high-impedance and rectifying properties FTJs are interesting candidates for the implementation of selector-less passive cross-bar arrays and for massive parallel readout for the realization of MVM in scalable selector-less passive cross-bar arrays. In this talk I will introduce the concept of the FTJ devices and discuss the prospects for their adoption in memory applications and beyond.